深圳市科达佳电子

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Electrical Characteristics (Ta = 25°C)
Item Symbol Min T* Max Unit Test conditions
Collector to base breakdown
voltage
V(BR)CBO 20 — — V IC
= 10 mA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO 12 — — V IC
= 1 mA, RBE = ¥
Emitter cutoff current IEBO — — 10 mA VEB = 3 V, IC = 0
Collector cutoff current ICBO — — 0.5 mA VCB = 15 V, IC = 0
DC current transfer ratio hFE VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 3.5 4.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG — 8.2 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 2.0 — dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “AR”.
See characteristic